Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors
نویسندگان
چکیده
For high electron mobility transistors (HEMTs) power based on AlGaN/GaN heterojunction, p-GaN gate has been the topology commonly used to deplete two dimensional gas (2-DEG) and achieve a normally-OFF behavior. But fully recessed MIS GaN or MOSc-HEMTs have gained interest as HEMTs thanks wider voltage swing reduced leakage current when compared HEMTs. However mandatory AlGaN barrier etching 2-DEG combined with nature of dielectric/GaN interface generates etching-related defects, traps, roughness. As consequence, threshold (VTH) can be unstable, is reduced, which presents challenge for integration gate. Recent developments studied solve this challenge. In paper, we discuss in recess low impact atomic layer (ALE) alongside surface treatments such wet cleaning, thermal plasma treatment, all scope having close pristine. Finally, different interfacial layers, AlN, alternative dielectrics investigated optimize are presented.
منابع مشابه
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Article history: Received 27 May 2015 Accepted 9 June 2015 Available online xxxx
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ژورنال
عنوان ژورنال: Energies
سال: 2023
ISSN: ['1996-1073']
DOI: https://doi.org/10.3390/en16072978